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| BAS 125-07 Silicon Schottky Diodes * For low-loss, fast-recovery, meter protection, bias isolation and clamping applications * Integrated diffused guard ring * Low forward voltage 3 4 2 1 4 3 1 2 EHA07008 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS 125-07 Maximum Ratings Parameter Diode reverse voltage Forward current Marking 17s 1 = C1 Pin Configuration 2 = C2 3 = A2 4 = A1 Package SOT-143 Symbol VR IF IFSM Ptot Tj Tstg 1) Value 25 100 500 250 150 -55 ... 150 Unit V mA mW C Surge forward current (t< 100s) Total power dissipation, TS = 25 C Junction temperature Storage temperature Maximum Ratings Junction - ambient RthJA 450 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm 1 Oct-07-1999 BAS 125-07 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz rf CT Unit max. A typ. IR VF 385 530 800 400 650 950 100 150 mV - 16 1.1 - pF 2 Oct-07-1999 BAS 125-07 Forward current IF = f (VF ) TA = Parameter 10 2 BAS 125... EHD07115 Forward current IF = f (TA*;TS) * Package mounted on alumina BAS 125... EHD07119 100 F mA 10 1 TA = -40C 25 C 85 C 150 C F mA 80 TS 60 TA 40 10 0 10 -1 20 10 -2 0.0 0.5 V VF 1.0 0 0 50 100 C 150 TA ; TS Reverse current IR = f (VR ) TA = Parameter 10 1 BAS 125... EHD07116 Differential forward resistance rf = f (IF) f = 10 kHz 10 4 rf 10 3 BAS 125... EHD07118 R A 10 0 TA = 125 C TA = 85 C 10 -1 10 2 10 -2 TA = 25 C 10 1 10 -3 0 10 V VR 20 10 0 10 -2 10 -1 10 0 10 1 mA 10 2 F 3 Oct-07-1999 BAS 125-07 Diode capacitance CT = f (VR) f = 1MHz BAS 125... EHD07117 1.0 CT pF 0.8 0.6 0.4 0.2 0.0 0 10 V VR 20 4 Oct-07-1999 |
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